Abstract
Both metalorganic chemical vapor deposition and pulsed laser deposition have been used to grow Ba0.6Sr0.4TiO3 (BST) thin films on Si with Pt electrodes. The smoother Pt electrodes allow the BST to grow with greater crystallinity. Thin film Pt/BST/Pt capacitors with a dielectric thickness of around 170 nm show dielectric constants over 400 and dielectric losses in the range of 0.01–0.03 at 10 kHz. The electric/dielectric properties of the BST films are further improved by first depositing a 27 nm BST seed layer by metalorganic chemical vapor deposition followed by a 145 nm BST layer deposited by pulsed laser deposition.
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