Abstract
The photovoltaic performance of CdTe solar cells is mainly limited by low doping and short minority carrier lifetime. Group-V element doping and Se-alloying have a significant impact on tuning these fundamental CdTe properties. In this paper, we report the growth of p-type As-doped, Cd-rich CdTe1−xSex single crystals using metallic Cd as the solvent in the traveling-heater method. The structural and electrical properties of CdTe1−xSex are examined for different Se concentrations. CdTe1−xSex single crystals (0 ≤ x ≤ 0.5) with zincblende structure indicate homogeneous composition. The 1017 cm−3 As-doping activation efficiency can be maintained at close to 50% for x ≤ 0.2. Se alloying leads to bulk minority carrier lifetime exceeding 30 ns for samples doped near 1017 cm−3. These results help us to overcome the current roadblocks in device performance.
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