Abstract
The Fe doping of GaN by metalorganic chemical vapor deposition was studied. Si–Fe co-doping experiments revealed that the compensation activity of Fe was 34%. The Fe-doping response was investigated in detail by secondary ion mass spectroscopy. The observed slow Fe concentration turn-on and turn-off was found to be related to the sample surface, rather than to the reactor environment. Improved turn-off was demonstrated by etching a GaN:Fe surface in acids before the GaN regrowth. Fe segregation on the growth surface was proposed to explain the observed Fe-doping response.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
