Growth and characterisation of Hg 1 − xCd xTe (0.21 < x < 0.36) epilayers grown from Te-rich solution by the dipping technique

Abstract

Hg 1 − x Cd x Te (0.21 < x < 0.36) epilayers were grown on 〈111〉 CdTe substrates by liquid phase epitaxy from a supersaturated Te-rich solution by the dipping technique at 440 and 470°C. Mercury vapour loss was accounted for by adding the estimated loss of Hg in the form of HgTe in the Te-rich solution. The physical parameters such as surface morphology, composition, thickness, full width at half maximum (FWHM) of double crystal X-ray diffraction (DCXRD) rocking curve and broadening parameters from electrolyte electroreflectance (EER) are given. The effect of growth rate on the crystalline quality is investigated. It is shown by X-ray diffraction and electrolyte electroreflectance measurements that the quality of an epilayer deteriorates when the epilayers are grown at a cooling rate in excess of 2°C h − 1.