Abstract
Thin films of Hg 1- x Cd x Te were grown on the (111)CdTe substrates by slider liquid phase epitaxy from Te-rich solution in the temperature range from 400 to 500°C. Satisfactory epi-layers were obtained at the temperature as low as 425°C. The low temperature (below 450°C) LPE technique has shown several advantages over the high temperature growth. These are: (i) the residual melt drops can be well drained from the epi-layers after withdrawal from the solution, (ii) the composition gradient of the epilayers is reduced, and (iii) the concentration of mercury vacancies is decreased. The surface morphology of epi-layers is also affected by the change of growth temperature. Large voids were formed quite easily for the growth on (111)A CdTe substrates at low temperatures. However, for the (111)B growth, these voids appeared only occasionally. It was also observed that terraces of a larger spacing were formed for the low temperature growth.
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