Abstract
An epitaxial Ni thin film is grown on a LaAlO3 single-crystalline thin film on Si (001). The p-type Schottky barrier height at the Ni/LaAlO3 interface is measured to be 2.88 eV by x-ray photoemission spectroscopy. The effective work function of the Ni film on LaAlO3 is determined to be 5.15 eV. Good epitaxial quality and a high effective work function suggest that Ni is a promising gate material integrated with LaAlO3 dielectric films for p-type metal oxide semiconductor field effect transistors.
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