Abstract
Undoped and In-doped ZnO films on glass substrate were successfully grown by spray pyrolysis at 500 °C. The samples were annealed under N2 atmosphere between 100 and 600 °C for 5 min. The lattice constants and grain sizes of both samples were unchanged with increasing annealing temperature. However, the photoluminescence intensity of the In-doped sample markedly decreased in comparison with that of the undoped sample with increasing annealing temperature. The carrier concentration increased with increasing annealing temperature. These findings indicated that the number of nonradiative recombination centers of the In-doped ZnO samples markedly increased.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
