Abstract
P(Al <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">x</inf> Ga <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">1-x</inf> As:Ge)-p(GaAs:Ge)-n <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">+</sup> (GaAs:Te) solar cells have been fabricated using multiple layer liquid phase epitaxial (LPE) growth techniques. Germanium was used as the p-type dopant to eliminate impurity diffusion and to maximize minority carrier diffusion lengths. These procedures provide precise control of the thickness and carrier concentration of each individual layer.
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