Abstract
In this study, the growth characteristics of carbon nanowalls (CNWs), which are applied to many devices because of their high aspect ratio and excellent electrical characteristics thanks to their two-dimensional structure, were confirmed by changing the ratio of methane (CH₄) and hydrogen (H₂) therein. In many studies, CNWs were grown using various chemical vapor deposition (CVD) or sputtering methods, with a mixture of CH₄ and H₂ or argon (Ar) gas. To find the suitable rate, 25 sccm CH₄, which is used as the source gas, was first injected into the chamber, and the characteristics were confirmed by changing the amount of H₂ gas from 0 to 50 sccm. Ultrasonically cleaned Si wafer was used as the substrate, and the CNW was grown for 10 minutes at microwave power (1300 W, 600°C) using microwave-plasma-enhanced CVD (MPECVD).
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