Group IV Based Bi-Layer Tunneling Field Effect Transistor

Abstract

We have proposed and demonstrated bi-layer tunneling FETs (TFETs) composed of group IV/oxide semiconductor type-II heterojunctions, where the group IV and oxide semiconductors work as source and channels, respectively, of TFETs. The simulation study has revealed that ZnO/Si or Ge TFETs can exhibit extremely-steep sub-threshold slope of ~ 1 mV/dec with Ion of ~100 μA/μm order. The operation of bi-layer ZnO(ZnSnO)/Ge(Si) TFETs has been experimentally demonstrated with a minimal sub-threshold slope of 71 mV/dec at room temperature.