Material design of oxide-semiconductor/group-IV-semiconductor bilayer tunneling field effect transistors

Abstract

Performance improvement of a bi-layer tunneling field effect transistor (TFET) with a hetero tunneling junction composed of an oxide-semiconductor (OS) and a group-IV semiconductor is demonstrated. Improvement of the channel thickness uniformity by introducing an amorphous ZnSnO layer is effective for increasing ON current and high ON/OFF current ratio, and decreasing averaged sub-threshold swing. A guideline for material design in the bilayer TFETs is addressed, based on electrical characteristics including the temperature dependence.