Grinding mechanism and surface quality evaluation strategy of single crystal 4H-SiC

Abstract

This paper investigated the removal mechanism and surface quality of single crystal 4 H-SiC during the grinding process, as well as the impact of the measurement area on surface roughness (Sa) during surface morphology detection. This problem is relatively unexplored. Experimental findings suggest that when the measurement area is below 400 µm², there is a greater error in Sa. Conversely, when the measurement area exceeds 400 µm², the error in Sa values is relatively small and stable. The surface quality increases with the increase of wheel speed (vs) and decreases with the increase of workpiece feed rate (vw) and grinding depth (ap). This study finds that the material removal of monocrystalline single crystal 4 H-SiC during the grinding process occurs primarily through plastic deformation, accompanied by brittle fracture.