Grid-patterned trench insulated gate bipolar transistor for 1.2 kV hybrid/plug-in hybrid electric vehicle silicon power devices

Abstract

This paper reports on the newly developed silicon insulated gate bipolar transistor (IGBT) for Toyota’s fifth generation power devices. The designed IGBTs with a grid-patterned trench provide a lower on-state voltage (V ON ) while maintaining a wide mesa width. A successful 15% reduction of V ON was accomplished by enhancement of the two-dimensional hole storage effect. Furthermore, the grid-patterned trench IGBT merged with Schottky and multi-layered anode technology demonstrated a significant improvement in the trade-off curve between the reverse recovery current (I rr ) and V ON in a reverse conducting IGBT without a lifetime control process. As a result, the grid-patterned trench IGBT has contributed to reduce power loss and volume in the new power control units.