Greens functions theory for semiconductor quantum well laser spectra

Abstract

A microscopic approach for the computation of semiconductor quantum well laser power spectra is presented. The theory is based on nonequilibrium Greens functions techniques that allow for a consistent description of the coupled photon/carrier system fully quantum- mechanically. Many-body effects are included through vertex corrections beyond the random phase approximation. Bandstructure engineering effects are incorporated in the theory as dictated by the coupled band solutions of the Luttinger Hamiltonian. The influence of the detailed cavity-mode structure is accounted for by the photon Greens function. Numerical results are presented for III-V systems at quasi-equilibrium and active optical switching is demonstrated in specially designed structures.