Abstract
The tangential component of the electrostatic field at the insulator-semiconductor interface of an MIS structure is studied by means of Green's function techniques. The two-dimensional problem is solved by taking into account the presence of the metallic gate, the dielectric discontinuity at the interface, the influence of the fixed ionized impurity atoms in the depletion region, and that of the mobile surface inversion charge. The theory derived is used to calculate the tangential field at the Si-SiO2 interface in a standard surface-channel charge-coupled device with co-planar electrodes. Special emphasis is placed upon the physical interpretation of the mathematical analysis.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
