Abstract
Using extremely low synthesis temperatures in molecular beam epitaxy (MBE) conditions on MgO(001), SrTiO3(001), and MgAl2O4(001), we find great differences in the crystallinity and magnetic properties between Co-based full-Heusler-alloy Co2FeSi and Co2MnSi films. For example, while L21-ordered Co2FeSi films can be demonstrated on all the oxides even at less than 80 °C, only the B2-ordered and amorphous Co2MnSi films can be obtained. Considering the experimental results and the findings obtained from theoretical calculations, we can conclude that the stability of the Heusler/oxide interfaces and the alloying energy of the disordered Heusler alloys are two of the most important factors for the low-temperature growth of epitaxial Co2FeSi and Co2MnSi films on these oxides. We suggest that Co2FeSi is more suitable for low-temperature formed spintronic devices than Co2MnSi.
Published Version
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call