Abstract
Thin films of silicon carbide with codeposited elemental silicon were prepared by chemical vapor deposition (CVD). In a second CVD-process a thin titanium layer was deposited on the SiC(Si) basic layer. The solid state reaction between titanium and the codeposited silicon can be observed by X-ray diffractometry. A helpful analytical method for the observation of the growth of the reaction products is grazing incidence X-ray diffractometry. Various diffraction patterns of titanium silicides can be obtained by decreasing incidence angles.
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