Abstract

The in-plane mosaic structure of Au/Fe and GaN-based epitaxial layers has been determined directly by laboratory-based grazing incidence in-plane x-ray diffraction in which Bragg reflections normal to the plane of the wafer are probed. High intensity and acceptable signal-to-noise can be obtained with no modifications to commercially available equipment. Excellent agreement is obtained between measurements of the same Au/Fe multilayer samples at the European Synchrotron Radiation Facility in Grenoble and with the laboratory system employing a focused x-ray beam from a microfocus generator. The technique is particularly important for the GaN-based systems as it uniquely provides a measure of the so-called twist mosaic independent of the out-of plane (tilt) mosaic.

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