Abstract
We examined the substitutional doping of B atoms into epitaxial graphene on the SiC(0001) surface. B atoms were deposited on the SiC(0001) surface in advance of the growth of graphene. The B-induced changes in the surface morphology and chemical composition were characterized at the four thermal treatment stages in the growth of graphene (at 1120, 1370, 1520, and 1770K) by low-energy electron diffraction (LEED), auger electron spectroscopy (AES), atomic force microscopy (AFM), and scanning tunneling microscopy (STM). The B atoms were found to hinder the formation of a spatially uniform graphene layer. However, local deformation of the graphene lattice, which should be observed if B atoms are successfully doped substitutionally, was not observed in STM.
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