Graphene/InAs nanowire composite structure photodetector

Abstract

A composite photodetector was fabricated by using InAs nanowires and single-layer graphene. Under positive/negative bias, the device exhibits the response characteristics of a negative photoconductive photodetector and a Schottky junction photodetector, respectively. Under positive bias, the device is a negative photoconductive photodetector. The response current is less than the dark current. The maximum responsivity of the device is 736.4A/W, and there is also a significant response current in the case of low illumination intensity. Under negative bias, the device is a Schottky junction photodetector with a maximum response of 9.4A/W and a barrier height of 0.16eV. Combining the characteristics of the two photoelectric response characteristics, the advantages are complemented. It greatly improves the applicable environment of the device, expands the application space of the photodetector, and provides a new idea for the preparation of the photodetector