Abstract
Graphene/GaAs heterojunction has been demonstrated by transferring monolayer graphene on the surface of n-GaAs substrate, and the carrier transfer at the interface has been investigated by monitoring Raman shift of graphene on different substrates. The photovoltaic behavior and rectifying characteristic of the graphene/GaAs heterojunctions enable us to fabricate high-performance self-powered photodetector at zero bias. The device has been demonstrated to be sensitive to visible/near-infrared light (405–850 nm) at room temperature, giving rise to maximum responsivity of 122 mA W−1 and detectivity of 4.3 × 1012 Jones with quick response and recover time (0.5 ms and 0.35 ms), respectively. Such high photoelectric response is attributed to the efficient photo-generated carrier separation and transfer at the interface, which is caused by the strong built-in electric field between grapheme and GaAs because of a large barrier (0.87 eV). Our results confirm that the graphene/GaAs heterojunction has a great potential for high performance self-powered broadband photodetectors.
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