Abstract
There are a growing number of applications demanding high sensitivity visible to mid-infrared photodetectors operating at room temperature. Graphene is ideally suitable for optoelectronic photodetectors sensitive from visible to mid-infrared frequencies. Here we report the integration of graphene with thin film high-κ dielectric layers prepared by e-beam thermal evaporation, sputtering deposition and atomic layer deposition methods for the graphene field effect transistor photodetector development. The impact of dielectric layers on graphene properties and the operation of photodetectors varies based on the choice of dielectric and deposition parameters. This work provides a route for use of graphene in the infrared detection at room temperature.
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