Abstract

ABSTRACTIn this paper we demonstrate that graphene is one of the best materials for new types of terahertz lasers as optical and/or injection pumping of graphene can exhibit negative-dynamic conductivity in the terahertz spectral range. We analyze the formation of nonequilibrium states in optically pumped graphene layers and in forward-biased graphene structures with lateral p-i-n junctions and consider the conditions of population inversion and lasing. The latter provides a significant advantage of the injection pumping in realization of graphene terahertz lasers. We benchmark graphene as a prospective material for injection-type terahertz lasers.

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