Abstract
The spectrum of two-dimensional (2D) and layered materials “beyond graphene” has been continually expanding. The realization of wide bandgap 2D materials “beyond hexagonal boron nitride (hBN)”, however, has been limited. Group-III nitride semiconductors such as indium nitride (InN), gallium nitride (GaN), and aluminum nitride (AlN) are proposed to have thickness tunable energy bandgaps ranging from 0.7 – 7.0 eV as a result of quantum confinement. Despite the extensive computational discovery of 2D materials, the synthesis of 2D III-nitrides “beyond hBN” is still elusive. We demonstrate for the first time that 2D atomic layers of GaN not only can be stabilized, but also exhibit unique structural properties from that of bulk material.
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