Abstract
The spectrum of two-dimensional (2D) and layered materials “beyond graphene” has been continually expanding. The realization of wide bandgap 2D materials “beyond hexagonal boron nitride (hBN)”, however, has been limited. Group-III nitride semiconductors such as indium nitride (InN), gallium nitride (GaN), and aluminum nitride (AlN) are proposed to have thickness tunable energy bandgaps ranging from 0.7 – 7.0 eV as a result of quantum confinement. Despite the extensive computational discovery of 2D materials, the synthesis of 2D III-nitrides “beyond hBN” is still elusive. We demonstrate for the first time that 2D atomic layers of GaN not only can be stabilized, but also exhibit unique structural properties from that of bulk material.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.