Graphene quantum dots as shallow traps in a high-k polymer matrix for bipolar resistive switching

Abstract

Graphene quantum dots (GQDs) have broad applications in electronic and photonic devices. As a typical zero-dimensional material, a GQD has a stronger quantum confinement effect than do two-dimensional graphene or one-dimensional graphene nanoribbons, and provide efficient charge trapping sites, which are useful in nonvolatile memory devices. Here, we report the fabrication of 30-nm-thick GQD-blended high-k polymer cyanoethylated pullulan (CEP) thin films sandwiched between an Al top electrode and an indium tin oxide (ITO) bottom electrode. Bipolar resistive switching behavior was observed with a low onset (−1.7 V) and offset (1.3 V) voltages. The resistive switching behavior originates from shallow traps that induce space-charge-limited current conduction. The morphology, crystallinity and photoluminescence of the GQDs were also studied by atomic force microscopy, transmission electron microscopy, and photoluminescence spectroscopy. The CEP/GQD blended films may have applications in nonvolatile resistive memory devices.