Abstract
In this paper, an analytical approach has been made to represent graphene nanoribbon based schottky barrier diode as an Electric Field Sensor. Mainly the studies of the relationship between electric field and schottky barrier lowering and the relationship between electric field and current density have been presented. It is observed that electric field increases with the increase of schottky barrier lowering (i.e. the lowering of the schottky barrier potential enhances) which in turn enhances the net current density as more and more carriers can cross the metal-semiconductor barrier owing to the lowered barrier potential. Ultimately this encourages us to predict easily the corresponding electric field either from the schottky barrier lowering value or from the value of the current density. Thus, it can be stated that a GNR based schottky diode can function as an electric field sensor.
Published Version
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