Abstract
On page 303, C. Chen, J. Guo, H. Dai, and co-workers introduce uniaxial strains (0-6%) into individual graphene nanoribbons (GNRs) with highly smooth edges for the first time by atomic force microscopy manipulation and investigate strain effects on GNRs. It is found that uniaxial strain downshifts the Raman G-band frequency of GNRs linearly and tunes their bandgap significantly in a non-monotonic manner. Strain engineering of GNRs is demonstrated to be promising for modulating the properties of GNRs toward potential device applications.
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