Grant low field magnetoresistance and hall effect in dilute AℓV and AℓTi alloys

Abstract

Abstract Numerically large Hall and magnetoresistance coefficients are reported for very dilute alloys of Al containing the 3d impurities Ti and V. The Hall results are unexpected for substitutional impurities. The giant magnetoresistance coefficients are shown to result from strong electron scattering anisotropy, not between second zone holes and third zone electrons, but from strong interaction between plane wave states on the free electron portion of the Fermi surface and the 3d virtual bound state.