Grain‐Boundary Chemistry of Barium Titanate and Strontium Titanate: II, Origin of Electrical Barriers in Positive‐Temperature‐Coefficient Thermistors

Abstract

Scanning transmission electron microscopy (STEM) of positive‐temperature‐coefficient (PTC) BaTiO3 thermistors shows that the grain‐boundary oxygen content in as‐received (oxidatively cooled) materials is slightly enriched compared to quenched samples, and the acceptor‐rich space‐charge present at high temperatures is retained upon cooling. The defect density of the space charge is approximately equal to the acceptor state density at PTC boundaries determined by electrical measurements. Accordingly, it is proposed that the electrical barrier forms when acceptor defects already segregated in the ionic space charge at high temperature become active interface states when compensating donor defects in the grain‐boundary core are oxidized. These acceptor defects appear to be primarily barium vacancies, but need not form upon cooling in the manner proposed by Daniels and Wernicke. Acceptor solutes when present can also contribute to barrier formation through space‐charge segregation; the increase in interface state density upon addition of Mn is consistent with the magnitude of the expected segregation.