Abstract
The influence of grain size ranging from 0.3 to 3 mm on the performance of p on n polycrystalline silicon solar cells having columnar grains has been investigated. Solar grade polysilicon having an impurity concentration as high as 10 16–10 17/cm 3 with iron as major has been used for the fabrication of solar cells. The variations in illuminated solar cell parameters particularly the efficiency (ν) and the bulk diffusion length ( L) with grain size show that the detrimental effects of grain boundaries in solar grade polysilicon are more pronounced as compared to those reported earlier on semiconductor grade polysilicon. The study of dark I–V characteristics show that the grain boundaries do not appreciably affect bulk recombination; whereas space charge recombination becomes predominant with decrease in grain size.
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