Abstract
Using a dc sputtering method at high oxygen pressures we have deposited epitaxial Ag-doped YBa2Cu3O7−x thin films on SrTiO3 bicrystals with missorientation angle of 36.8°. A 15 % Ag-doped YBa2Cu3O7−x sintered target was used to sputter the films. Critical current of 4–5 106 A/cm2 at 77 K were measured in doped films. When compared with 1 × 106 A/cm2 for undoped films, indicated an improvement of the superconducting properties by Ag doping. 200–300 nm thick Ag-doped films were patterned across the bicrystal line to form 5–20 μm-wide junctions. Current-voltage characteristics of the grain boundary junctions at temperatures from 10 K to TC showed a resistively shunted junction (RSJ) behavior with ICRN values of 160–170 μV at 77 K which are higher than the measured values for undoped junctions.
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