Abstract
The grain boundary resistance of 9 mol% Y 2O 3-stabilized ZrO 2 with Al 2O 3 addition was measured by the complex impedance approach. The effect of Al 2O 3 addition on the grain boundary resistance was analyzed from the aspects of microstructure and crystal defects by means of SEM, EPMA, TEM and the positron annihilation technique. The Al 2O 3 addition up to 5 mol% was found to reduce the grain boundary resistance per unit surface area of the grain boundaries and the activation energy for the grain boundary resistance. This phenomenon was explained by the scavenging of the grain boundary impurities, e.g. SiO 2, by the Al 2O 3 and the formation of the crystal grain boundary phases with very high defect concentration. By the analyses with a simplified theoretical model, the Al 2O 3 addition was considered to have no detrimental effect on the emf of the ZrO 2 oxygen sensor.
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