Abstract
How to achieve a giant dielectric constant and high energy storage density at the same time has been the problem to be solved for donor-acceptor co-doped TiO2 ceramics. In this work, (Ho0.5Ta0.5)0.01Ti0·99O2 - x SiO2, where x = 0, 1, 3, 5 and 7 wt% (HTTO - x wt% SiO2), nanocomposites were prepared via a conventional mixed oxide technique. Significantly, the HTTO - 5 wt% SiO2 composite ceramic exhibits a low dielectric loss (tanδ ∼ 0.012) and an ultrahigh permittivity (εr ∼ 1.29 × 104) at 1 kHz. Also, excellent energy storage property with a high breakdown field strength (Eb ∼1.86 kV/cm) and energy storage density (η ∼ 1.97 mJ/cm3) was obtained in HTTO - 5 wt% SiO2 ceramic. Besides, the enhancement of Eb is attributed to the finer grains and the presence of SiO2 blocking layers in the grain boundaries, which hinder the long-range motion of electrons. It can be concluded that the CP and high energy storage properties arise from the combined contribution of enhanced grain boundary effects and electron-pinning type of defect dipole (EPDD) effects. This study not only proposes an effective method improving Eb, but also offers a new routine for how to simultaneously achieve CP and high η in TiO2 dielectric materials.
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