Abstract
Abstract The simultaneous occurrence of interdiffusion and recrystallization processes in Cu-Pb thin film structures was studied by means of He+ backscattering and transmission electron microscopy techniques. The preferential migration of Pb atoms through the Cu thin films has been attributed to the larger average grain size of the Pb film compared to that in Cu. Migration of Cu, having a large grain structure, into a Pb thin film has been detected, thereby verifying this hypothesis. The grain growth process occurs in the same temperature range at which grain boundary diffusion takes place. The simultaneous occurrence of both processes gives rise to competition, i.e. reduction of each process.
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