Abstract
Intermixing processes in Cu-Pb thin film couples have been studied by MeV He+ backscattering and transmission electron microscopy techniques. Because of the nonmiscibility of these two atomic spe-cies the only migration which can occur is via the grain boundaries. A preferential migration of Pb atoms into Cu thin film structure and their pile up at the Cu free surface has been observed. The migration has been measured as a function of annealing temperature, film thickness, oxide contamination and evaporation sequence. T.E.M. and diffraction patterns show that grain boundary diffusion and grain growth are competitive processes and this last process is inhibited as grain boundary filling occurs. The preferential migration of Pb into Cu thin film may be attributed to the larger grain boundary surface to volume ratio of the copper with respect to lead evaporated films.
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