Abstract
In general, defects in grain boundaries (GBs) in polycrystalline materials form effective recombination centers. However, this is not the case for polycrystalline Cu(In,Ga)Se2 (CIGS) thin films used in solar cells. It is difficult to determine GB properties by electron backscatter diffraction (EBSD) and electron-beam-induced current (EBIC) measurements because of the surface roughness of as-grown CIGS films. In this study, the CIGS film surface was flattened by ion milling, and then the GB character distribution and spatial distribution of electronically active defects were determined by EBSD and EBIC measurements, respectively. Results suggested that flattening the CIGS film surface enabled the measurements of intrinsic GB properties. Moreover, the results revealed that the GB character distribution on the CIGS film surface hardly changed in the band gap energy range less than 1.28 eV.
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