Abstract

This study presents conductance modulation in a Pt/TiO2/HfAlOx/TiN resistive memory device in the compliance region for neuromorphic system applications. First, the chemical and material characteristics of the atomic-layer-deposited films were verified by X-ray photoelectron spectroscopy depth profiling. The low-resistance state was effectively controlled by the compliance current, and the high-resistance state was adjusted by the reset stop voltage. Stable endurance and retention in bipolar resistive switching were achieved. When a compliance current of 1 mA was imposed, only gradual switching was observed in the reset process. Self-compliance was used after an abrupt set transition to achieve a gradual set process. Finally, 10 cycles of long-term potentiation and depression were obtained in the compliance current region for neuromorphic system applications.

Highlights

  • Self-Compliance Region of an Resistive switching behavior is observed in many dielectrics under an electric field [1]

  • XPS analysis was performed as the X-ray was incident from the TiO2 surface, and analysis was conducted on the inner thin film through Ar+ etching

  • Atomic layer deposition (ALD)-deposited film had better stoichiometry compared with films deposited by other sputtering systems [35]

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Summary

Introduction

Self-Compliance Region of an Resistive switching behavior is observed in many dielectrics under an electric field [1]. The non-volatile resistance states are reversible in the high-resistance and low-resistance states. The types of switching are largely divided into unipolar and bipolar switching [2]. The memory state of the unipolar resistive switching memory can be changed by the electric stress at the same polarity. The reset process from a low-resistance state (LRS) to a highresistance state (HRS) occurs by rupture of the conducting filament by Joule heating [3]. The set and reset processes of the bipolar resistive type occur via the opposite polarity of the electric field. Among the many resistive switching materials, metal oxides are the most popular, owing to their good stability, reproducibility, and repeatability [4,5,6,7,8,9,10,11,12,13,14,15,16,17]

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