Abstract
The subterahertz (sub-THz) noise signals were used for spectroscopy, tomographic imaging and other useful applications, The InGaN-based graded gap heterostructure diodes are proposed as a noise sources in the sub-THz and THz region. Operation principle of the diode is usage of an impact ionization that arises in high electric field domain. Ionization region represents the graded-gap GaInN-based layers with a normal distribution of indium mole fraction. Ensemble Monte Carlo technique has been used for diodes analyze. The current-voltage characteristics and noise characteristics are calculated depending on donor doping distributions. It is estimated the spectral noise power density of the proposed diodes. Obtained results have been compared to ones of the similar InGaAs- based structure.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.