Abstract
The subterahertz (sub-THz) noise signals were used for spectroscopy, tomographic imaging and other useful applications, The InGaN-based graded gap heterostructure diodes are proposed as a noise sources in the sub-THz and THz region. Operation principle of the diode is usage of an impact ionization that arises in high electric field domain. Ionization region represents the graded-gap GaInN-based layers with a normal distribution of indium mole fraction. Ensemble Monte Carlo technique has been used for diodes analyze. The current-voltage characteristics and noise characteristics are calculated depending on donor doping distributions. It is estimated the spectral noise power density of the proposed diodes. Obtained results have been compared to ones of the similar InGaAs- based structure.
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