Abstract
The noise signal sources at subterahertz(sub-THz) and terahertz(THz) region are useful in many applications such as tomographic imaging, spectroscopy, radars and other. The GaInAs-based diodes for noise generation in the sub-THz and THz region are proposed. The diodes based on the mechanism of impact ionization in graded-gap region and static high field domain formation near cathode. Ensemble Monte Carlo technique was used for diodes analyze. The spectral noise density power is calculated for difference profiles of spatial Ga distribution in GaInAs. It is found that the spectral noise density power of the proposed diodes exceeds the one of GaAs-based diodes by at least an order of magnitude.
Sign-in/Register to access full text options 
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
