Abstract
pAlxGa1–xAs-nGaAs graded band-gap haterojunction solar cells have been prepared by molecular beam epitaxy (MBE). The graded band-gap structure effectively reduces the surface recombination and improves the collection efficiency of solar cells. MBE is the most adequate crystal-growth technique to fabricate this structure. It is easy to realize the profile for the most suitable electric-field distribution. For the alloy obtained by varying the temperatures of Al and Ga effusion cells linearly with time, the profile measured by Auger electron spectroscopy with ion-sputter etching has been obtained as an ideal one to drive carriers generated near the surface towards the junction. The measured spectral response of graded band-gap cells indicated the remarkable improvement of collection efficiency especially in the region of shorter wave-length in comparison with abrupt heterojunction cells with uniform compositions.
Published Version
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