Abstract
Tape automated bonding (TAB) is a suitable technology for assembling ICs with a high number of l/Os. The gang bonding process usually applied requires increasing thermode forces for chips with high lead counts and narrow tolerances regarding thermode parallelism and planarity. Due to the high bonding pressure, TC bonding of Au bumps to Au‐plated tapes becomes critical for these applications. In order to avoid damage to the pad structure an inner lead bonding (ILB) process with reduced pressure is required. A tape metallisation of 0.5–1.0 µm Sn is not sufficient for a significant reduction of thermode pressure. As an alternative, the application of an eutectic Au‐Sn cushion which is deposited on top of the bumps is presented. A modified bumping process was developed for the deposition of the solder bumps. Soldering of the Au‐Sn bumps to a Au‐plated tape was performed successfully by two techniques: thermode gang bonding and laser soldering. Bond parameters and tin layer thickness were optimised. Reliability investigations by thermal ageing were performed. The special metallurgical aspects of the system were investigated with a microprobe.
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