Abstract
A simple thermal annealing process was carried out to produce the innovative heterostructure of gold-Ga2O3 co-shell nanowires. By changing the growth temperature and the size of the gold catalyst, it is easy to control the growth of pure Ga2O3 or gold- Ga2O3 co-shell nanowires. The twin boundary induced gold-Ga2O3 co-shell nanowires, including the gold-peapodded and gold-Ga2O3 core-shell nanowires, were first fabricated by the reaction of the gold, gallium metal and silica. The morphologies, crystal structures and microstructures were investigated by field-emission scanning electron microscope (FESEM, JSM-6500F), X-ray spectrometer (SHINMADZU) and field-emission transmission electron microscope (FETEM, JEM-3000F), respectively. Furthermore, the novel 1-D gold-Ga2O3 co-shell nanowires, reported in present study, shows the potential application for the next generation optoelectronic devices in semiconductor industry.
Published Version
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