Abstract
Field-effect transistor (FET) type gas sensors are showing their great attractions to researchers due to their miniature size, gate tunable sensitivity and compatibility with CMOS technology. Amorphous indium gallium zinc oxide (a-IGZO) thin film transistors have the advantage of simple preparation method, high mobility and potential for large-scale integration, which has been widely investigated in recent years. The traditional method of obtaining selectivity of semiconductor sensing materials is to make chemical decorations directly to the semiconductor active layer, which may damage the material’s properties. In this paper, we decorate graphene oxide (GO) with p-hexafluoroisopropanol phenyl (HFIPPH) to form GO-HFIPPH, and then use GO-HFIPPH to physically modify a-IGZO TFT through self-assembly to prepare a FET-type dimethyl methylphosphonate (DMMP) sensor. The proposed sensor shows good sensitivity and selectivity to DMMP, and has a 61.1 nA response to 200 ppb DMMP with 42 s and 26 s response/recovery time. In addition, the sensing mechanism is explained based on hydrogen bond theory, heterojunction and charge transportation of the a-IGZO transistor. We believe our GO-HFIPPH/a-IGZO TFT DMMP sensor will show a significant value for FET-type gas sensor design.
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