Abstract
Characteristics of an enzyme-modified field-effect transistor (EnFET) made of a ZnO-based ion-sensitive FET with immobilized glucose oxidase on the gate surface are studied for the application to healthcare chips. The EnFET was found to be able to detect reversibly and repeatedly the β-D glucose in solution in the range of 0.2-40 mmol/L with an apparent Michaelis constant of 3.3 mmol/L, indicating the suitability for diabetic plasma glucose sensors.
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