Abstract
Glow discharge optical spectroscopy has been demonstrated to be capable of obtaining chemical composition vs depth information in microvolume solid samples. Sample geometry and sputtering pressure were found to have a large effect on measured multilayer interface sharpness. The use of a sample backing plate which has a similar electrical conductivity and a larger cross−sectional area than the sample to be analyzed was found to greatly increase the interface depth resolution. Results are presented for GDOS−determined boron implantation and phosphorus diffusion profiles in Si. The measured profiles appear somewhat broader than expected from theory and possible explanations for this discrepancy are discussed.
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