Abstract
With the objective of obtaining shallow junctions, we have made a comparative study of the distribution profiles of phosphorus ions implanted into Si(100) at 5 to 200 keV, along different crystalline directions, viz. the [001] axis, the (310) plane with 7° tilt away from [001], and a random equivalent direction, defined by 5.2° tilt, and 7° rotation from the (100) plane. The P implants were also performed in amorphous Si, and through a thin SiO 2 layer at the same energies for comparison. The P depth profiles in Si were measured by SIMS with 14.5 keV Cs ions. The damage profiles in Si(100) crystals were studied by RBS/channeling of 2 MeV He ions. The role of the implants along the selected orientations is discussed in light of the resulting depth of the tails of the implanted dopants distribution.
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