Abstract
The results of ESR, IR and optical measurements on hydrogenated amorphous Si1-xCx films prepared by glow discharge (GD a-Si1-xCx: H) are presented. The spin density Ns increases drastically from 1016 cm-3 to 1020 cm-3 and the g-value gradually decreases from 2.0055 to 2.003, as the C content x is increased from 0 to 0.6. The weak dependence of g-value on x when x is less than 0.3 indicates that the increase in Ns with x is mainly due not to C dangling bonds but to Si dangling bonds in contrast with the results of previous studies on a-Si1-xCx films prepared by CVD or rf sputtering.
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