Abstract
The defects in diamond films, synthesized by dc arc discharge plasma CVD and hot filament CVD, were studied using ESR and IR measurements, and the effects of annealing on defect states were investigated for the first time. The results showed that the films exhibited ESR signals produced by carbon dangling bonds of diamond and graphite. The g values of them were the same, g = 2.0027, the peak-to-peak line widths were 3.6 and 12.5 G respectively, and the spin density ( N s ) of the sample as-deposited was about 1.3 × 10 17 cm −3. H atoms in the diamond films saturated the C dangling bonds, forming Cz.sbnd;H bonds. After annealing at different temperatures, Cz.sbnd;H bonds broke and H atoms escaped, and as a result, N s varied.
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