Abstract
This paper describes a new unconditionally stable numerical method for the full-wave physical modeling of semiconductor devices by a combination of the finite-difference Laguerre time-domain (FDLTD) and alternative direction implicit finite-difference time-domain (ADI-FDTD) approaches. The unconditionally stable method by using FDLTD scheme for the electromagnetic model and semi-implicit ADI-FDTD approach for the active model leads to a significant decrease in the full-wave simulation time. Numerical simulations of an example transistor and a power amplifier show the efficiency of presented method for the full-wave simulation of mm-wave active circuits. Copyright © 2012 John Wiley & Sons, Ltd.
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