Glide of Basal Plane Dislocations during 150 mm 4H-SiC Epitaxial Growth by a Hot-Wall Reactor

Abstract

The glide of basal plane dislocations (BPDs) during 150 mm 4H-SiC epitaxial growth by a hot-wall reactor is characterized, and its formation mechanisms are discussed. The reason for the glide of BPDs during 150 mm 4H-SiC epitaxial growth is believed to be due to the strain related to the strain originally in the 150 mm substrate and the strain generated during the epitaxial growth. After the epitaxial growth process is optimized, it is possible to suppress the glide of BPDs, as a result of the effective relaxation of the strain.